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Philips Semiconductors
Full bridge driver IC
Additional application information
G ATE RESISTORS
At ignition of an HID lamp, a large EMC spark occurs. This
can result in a large voltage transient or oscillation at the
gates of the full bridge MOSFETs (LL, LR, HR and HL).
When these gates are directly coupled to the gate drivers
(pins GHR, GLR, GHL and GLL), voltage overstress of the
driver outputs may occur. Therefore, it is advised to add a
resistor with a minimum value of 100 ? in series with each
gate driver to isolate the gate driver outputs from the actual
power MOSFETs gate.
It may be necessary to add a diode in parallel to these gate
resistors in order:
1. To switch off the power transistor in time
2. To ensure that the power transistor remains in off-state
during a high ? V/ ? t at the bridge nodes; typical use
depends on the characteristics (gate charge, Miller
capacitance) of the power MOSFETs.
2005 Mar 24
15
Product speci?cation
UBA2032
G ATE CHARGE AND SUPPLY CURRENT AT HIGH FREQUENCY
USE
The total gate current needed to charge the gates of the
power MOSFETs equals:
I gate = 4 × f bridge × Q gate .
Where:
I gate = gate current
f bridge = bridge frequency
Q gate = gate charge.
This current is supplied via the internal low voltage supply
(V DD ). Since this current is limited to 11 mA (see
Section “Characteristics”; table note 1), at higher
frequencies and with MOSFETs having a relative high
gate charge, this maximum V DD supply current may not be
sufficient anymore. As a result the internal low voltage
supply (V DD ) and the gate drive voltage will drop resulting
in an increase of the on resistance (R on ) of the full bridge
MOSFETs. In this case an auxiliary low voltage supply is
necessary.
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